tm hvv0405-175 hig h voltage, hig h ruggedness uhf pulsed power transistor 400-500 mhz, 300s pulse, 10% duty cycle for uhf band, weather and long range radar applications the innovative semiconductor company! hvvi semiconductors, inc. 10235 s. 51st st. suite 100 phoenix, az. 85044 iso 9001:2000 certifed tel: (866) 429-hvvi (4884) or visit www.hvvi.com ? 2008 hvvi semiconductors, inc. all rights reserved. eg-01-ds10a 12/11/08 1 featu res t ypic al p erformance description ordering inform ation ? silicon mosfet technology ? operation from 24v to 50v ? high power gain ? extreme ruggedness ? internal input matching ? excellent thermal stability ? all gold bonding scheme high voltage vertical technology is well suited for high power pulsed applications in the uhf band including weather and long range radar applications. the high power hvv0405-175 device is an enhancement mode rf mosfet power transistor designed for pulsed applications in the uhf-band from 420mhz to 480mhz. the high voltage hvvfet? technology produces over 175w of pulsed output power while offering high gain, high effciency, and ease of matching with a 50 v supply. the vertical device structure assures high reliability and ruggedness as the device is specifed to withstand a 20:1 vswr at all phase angles under full rated output power. device part number: hvv0405-175 demo kit part number: HVV0405-175-EK available through richardson electronics (http://rfwireless.rell.com/) table 1: typical rf performance in broadband text fxture at 25c temperature with rf pulse conditions of pulse width = 300s and pulse period = 3ms. mode frequency vdd idq power gain efficiency irl (mhz) (v) (ma) (w) (db) (%) (db) class ab 450 50 50 175 25 55 20:1
tm hvv0405-175 hig h voltage, hig h ruggedness uhf pulsed power transistor 400-500 mhz, 300s pulse, 10% duty cycle for uhf band, weather and long range radar applications the innovative semiconductor company! hvvi semiconductors, inc. 10235 s. 51st st. suite 100 phoenix, az. 85044 iso 9001:2000 certifed tel: (866) 429-hvvi (4884) or visit www.hvvi.com ? 2008 hvvi semiconductors, inc. all rights reserved. eg-01-ds10a 12/11/08 2 elec tric al ch ar a c teristics pulse ch ar a c teristics therm al char a c teristics r uggedness p erformance hvvi semiconductors, inc . iso 9001:2000 certified eg - 01- d s 10 a 10235 s. 51 st st. suite 100 tel: (866) 429 - hvvi (4884) or visit www.hvvi.com 12 / 12 /08 phoenix, az. 85044 ? 2008 hvvi semiconductors, inc. all rights reserved. 2 h vv 0405 - 175 high voltage, high ruggedness uhf pulsed power transistor 400 - 500 m hz, 30 0s pulse, 10 % duty cycle for uhf band, weather and long range radar applications % duty the i n novative semiconductor company! the h vv0405 - 175 device is capable of withstanding an output load mismatch corresponding to a 20:1 vswr at rated o utput power and nominal operating voltage across the frequency band of operation. 1.) note: all parameters measur ed under pulsed conditions at 175 w output power measured at the 10% point of the pulse with pulse width = 30 0 sec, duty cycle = 10 % and vdd = 50v, idq = 5 0ma in a broadband matched test fixture. 2.) note: amount of gate voltage required to attain nominal quiescent current . symbol parameter conditions min typical max unit v br(dss) drain - so urce breakdown vgs=0v,id= 5 ma 95 10 2 - v i dss drain leakage current vgs=0v,vds=48v - 50 200 a i gss gate leakage current vgs=5v,vds=0v - 1 5 a g p 1 power gain f= 450 mhz 23 25 - db irl 1 input return loss f= 45 0mhz - - 7 - 4 db d 1 drain efficiency f= 45 0mhz 52 5 5 - % vgs(q) 2 gate quiescent voltage vdd=50v,idq=5 0ma 1.1 1.45 1.8 v vth threshold voltage vdd= 5 v , id=300a 0.7 1.2 1.7 v symbol parameter conditions min typical max units t r 1 rise time f= 450 mhz - < 2 5 50 ns t f 1 fall time f=45 0mhz - < 22 50 ns pd 1 pulse droop f=45 0mhz - 0.3 0.5 db symbol parameter max unit jc 1 thermal resistance 0.4 0 c/w symbo l parameter test condition max units lmt 1 load mismatch tolerance f = 450 mhz 20:1 vswr thermal performance pulse characteristics electrical characteristics ruggedness performance hvvi semiconductors, inc . iso 9001:2000 certified eg - 01- d s 10 a 10235 s. 51 st st. suite 100 tel: (866) 429 - hvvi (4884) or visit www.hvvi.com 12 / 12 /08 phoenix, az. 85044 ? 2008 hvvi semiconductors, inc. all rights reserved. 2 h vv 0405 - 175 high voltage, high ruggedness uhf pulsed power transistor 400 - 500 m hz, 30 0s pulse, 10 % duty cycle for uhf band, weather and long range radar applications % duty the i n novative semiconductor company! the h vv0405 - 175 device is capable of withstanding an output load mismatch corresponding to a 20:1 vswr at rated o utput power and nominal operating voltage across the frequency band of operation. 1.) note: all parameters measur ed under pulsed conditions at 175 w output power measured at the 10% point of the pulse with pulse width = 30 0 sec, duty cycle = 10 % and vdd = 50v, idq = 5 0ma in a broadband matched test fixture. 2.) note: amount of gate voltage required to attain nominal quiescent current . symbol parameter conditions min typical max unit v br(dss) drain - so urce breakdown vgs=0v,id= 5 ma 95 10 2 - v i dss drain leakage current vgs=0v,vds=48v - 50 200 a i gss gate leakage current vgs=5v,vds=0v - 1 5 a g p 1 power gain f= 450 mhz 23 25 - db irl 1 input return loss f= 45 0mhz - - 7 - 4 db d 1 drain efficiency f= 45 0mhz 52 5 5 - % vgs(q) 2 gate quiescent voltage vdd=50v,idq=5 0ma 1.1 1.45 1.8 v vth threshold voltage vdd= 5 v , id=300a 0.7 1.2 1.7 v symbol parameter conditions min typical max units t r 1 rise time f= 450 mhz - < 2 5 50 ns t f 1 fall time f=45 0mhz - < 22 50 ns pd 1 pulse droop f=45 0mhz - 0.3 0.5 db symbol parameter max unit jc 1 thermal resistance 0.4 0 c/w symbo l parameter test condition max units lmt 1 load mismatch tolerance f = 450 mhz 20:1 vswr thermal performance pulse characteristics electrical characteristics ruggedness performance the hvv0405-175 device is capable of withstanding an output load mismatch corresponding to a 20:1 vswr at rated output power and nominal operating voltage across the frequency band of operation. 1 note: all parameters measured under pulsed conditions at 175w output power measured at the 10% point of the pulse with pulse width = 300sec, duty cycle = 10% and vdd = 50v, idq = 50ma in a broadband matched test fxture. 2 note: amount of gate voltage required to attain nominal quiescent current. symbol parameter conditions min typical max unit v br(dss) drain-source breakdown vgs=0v,id=5ma 95 102 - v i dss drain leakage current vgs=0v,vds=48v - 50 200 a i gss gate leakage current vgs=5v,vds=0v - 1 5 a g p 1 power gain f=450mhz 23 25 - db irl 1 input return loss f=450mhz - -7 -4 db d 1 drain effciency f=450mhz 52 55 - % vgs(q) 2 gate quiescent voltage vdd=50v,idq=50ma 1.1 1.45 1.8 v vth threshold voltage vdd=5v, id=300a 0.7 1.2 1.7 v symbol parameter conditions min typical max unit t r 1 rise time f=450mhz - <25 50 ns t f 1 fall time f=450mhz - <22 50 ns pd 1 pulse droop f=450mhz - 0.3 0.5 db
tm hvv0405-175 hig h voltage, hig h ruggedness uhf pulsed power transistor 400-500 mhz, 300s pulse, 10% duty cycle for uhf band, weather and long range radar applications the innovative semiconductor company! hvvi semiconductors, inc. 10235 s. 51st st. suite 100 phoenix, az. 85044 iso 9001:2000 certifed tel: (866) 429-hvvi (4884) or visit www.hvvi.com ? 2008 hvvi semiconductors, inc. all rights reserved. eg-01-ds10a 12/11/08 3 hvvi semiconductors, inc. iso 9001:2000 certified eg - 01 -ds 10 a 10235 s. 51 st st. suite 100 tel: (866) 429-hvvi (4884) or visit www.hvvi.com 12 / 12 /08 phoenix, az. 85044 ? 2008 hvvi semiconductors, inc. all rights reserved. 3 h vv 0405 - 175 high voltage, high ruggedness uhf pulsed power transistor 400 - 500 m hz, 30 0s pulse, 10 % duty cycle for uhf band, weather and long range radar applications % duty the i n novative semiconductor company! z o = 10 z in * z out * 420 mhz 48 0mhz 420 mhz frequency zin *(ohms) zout*(ohms) 420 mhz 2.14 - j2.38 4.75 - j0.01 430 mhz 2.05 - j2.01 4.82 - j0.08 440 mhz 1.95j - 1.65 4.75 - j0.20 450 mhz 1.87 - j1.30 4.62 - j0.37 460 mhz 1.80 - j0.98 4.40 - j0.48 470 mhz 1.75 - j.064 4.10 - j0.56 480 mhz 1.68 - j0.33 3.70 - j0.55
tm hvv0405-175 hig h voltage, hig h ruggedness uhf pulsed power transistor 400-500 mhz, 300s pulse, 10% duty cycle for uhf band, weather and long range radar applications the innovative semiconductor company! hvvi semiconductors, inc. 10235 s. 51st st. suite 100 phoenix, az. 85044 iso 9001:2000 certifed tel: (866) 429-hvvi (4884) or visit www.hvvi.com ? 2008 hvvi semiconductors, inc. all rights reserved. eg-01-ds10a 12/11/08 4 demonstration board outline demonstration circuit board picture (autocad files for demonstration board available online at www.hvvi.com/products) hvv0405-175 demonstration circuit board bill of materials hvvi semiconductors, inc. iso 9001:2000 certified eg - 01 -ds 10 a 10235 s. 51 st st. suite 100 tel: (866) 429-hvvi (4884) or visit www.hvvi.com 12 / 12 /08 phoenix, az. 85044 ? 2008 hvvi semiconductors, inc. all rights reserved. 4 h vv 0405 - 175 high voltage, high ruggedness uhf pulsed power transistor % duty the i n novative semiconductor company! demonstration board outline demonstration circuit board picture (autocad files for demonstration board available online at www.hvvi.com/products ) hvv0405-175 demonstration circuit board bill of materials part description part number manufacturer c1,c2,c6,c7 : 220 pf atc 100b chip capacitor 100b221jp500x atc c3 1.0 uf, 100v chip capacitor (x7r 1210) grm32er72a105ma01l murata c4 10k pf 100v chi capacitor (x7r 1206) c1206c103k1ractu kemet c5 1k pf 100v chi capacitor (x7r 1206) c1206c102k1ractu kemet r1: 56 ohms chip resistor (1206) smd rc1206jr-07100kl digi-key r2: 1.5 k ohms chip resistor (1206) smd rc1206jr-07100kl digi-key c8: 22.0 pf atc 100b chip capacitor 100b220bw 150x atc c9: 15.0 pf atc 100b chip capacitor 100b150jp500x atc c10: 3.9 pf atc 100b chip capacitor 100b3r9jp500x atc c11,c12: 12 pf atc 100b chip capacitor 100b120jp500x atc c13: 24.0 pf atc 100b chip capacitor 100b240jp500x atc c14: 10 pf atc 100b chip capacitor 100b100jp500x atc c15: 1.0 pf atc 100b chip capacitor 100b1r0jp500x atc c16: 10uf 63v elect fk smd pce3479ct-nd digi key l1 43 nh coilcraft mini spring inductor b10t_l_ coil craft c17, c18: 100uf 63v elect fk smd pce3483ct-nd digi key rf connectors (2) type "n" rf connectors 5919cc-tb-7 coaxicom dc drain conn connector jack banana nylon red j151-nd digi-key dc ground conn. connector jack banana nylon black j152-nd digi-key dc gate conn. connector jack banana nylon green j153-nd digi-key pcb board pcb: arlon, 30 mils thick, 2.55 dielectric, 2 oz copper ds2525 ds electronics heat sink cool innovations aluminum heat sink cool innovation device clamp cool innovations nylon clamp foot fxt000158 rv.b cool innovation s.s. screws (3) 4-40 x 1/4 stainless steel hex head socket screws p242393 copper state bolt alloy screws (4) 4-40 x 1/2 alloy socket cap screw hex head scas-0440-08c small parts inc metal washers(4) #4 washer zinc pltd steel lock zslw-004-m small parts inc hvvi semiconductors, inc. iso 9001:2000 certified eg - 01 -ds 10 a 10235 s. 51 st st. suite 100 tel: (866) 429-hvvi (4884) or visit www.hvvi.com 12 / 12 /08 phoenix, az. 85044 ? 2008 hvvi semiconductors, inc. all rights reserved. 4 h vv 0405 - 175 high voltage, high ruggedness uhf pulsed power transistor % duty the i n novative semiconductor company! demonstration board outline demonstration circuit board picture (autocad files for demonstration board available online at www.hvvi.com/products ) hvv0405-175 demonstration circuit board bill of materials part description part number manufacturer c1,c2,c6,c7 : 220 pf atc 100b chip capacitor 100b221jp500x atc c3 1.0 uf, 100v chip capacitor (x7r 1210) grm32er72a105ma01l murata c4 10k pf 100v chi capacitor (x7r 1206) c1206c103k1ractu kemet c5 1k pf 100v chi capacitor (x7r 1206) c1206c102k1ractu kemet r1: 56 ohms chip resistor (1206) smd rc1206jr-07100kl digi-key r2: 1.5 k ohms chip resistor (1206) smd rc1206jr-07100kl digi-key c8: 22.0 pf atc 100b chip capacitor 100b220bw 150x atc c9: 15.0 pf atc 100b chip capacitor 100b150jp500x atc c10: 3.9 pf atc 100b chip capacitor 100b3r9jp500x atc c11,c12: 12 pf atc 100b chip capacitor 100b120jp500x atc c13: 24.0 pf atc 100b chip capacitor 100b240jp500x atc c14: 10 pf atc 100b chip capacitor 100b100jp500x atc c15: 1.0 pf atc 100b chip capacitor 100b1r0jp500x atc c16: 10uf 63v elect fk smd pce3479ct-nd digi key l1 43 nh coilcraft mini spring inductor b10t_l_ coil craft c17, c18: 100uf 63v elect fk smd pce3483ct-nd digi key rf connectors (2) type "n" rf connectors 5919cc-tb-7 coaxicom dc drain conn connector jack banana nylon red j151-nd digi-key dc ground conn. connector jack banana nylon black j152-nd digi-key dc gate conn. connector jack banana nylon green j153-nd digi-key pcb board pcb: arlon, 30 mils thick, 2.55 dielectric, 2 oz copper ds2525 ds electronics heat sink cool innovations aluminum heat sink cool innovation device clamp cool innovations nylon clamp foot fxt000158 rv.b cool innovation s.s. screws (3) 4-40 x 1/4 stainless steel hex head socket screws p242393 copper state bolt alloy screws (4) 4-40 x 1/2 alloy socket cap screw hex head scas-0440-08c small parts inc metal washers(4) #4 washer zinc pltd steel lock zslw-004-m small parts inc
tm hvv0405-175 hig h voltage, hig h ruggedness uhf pulsed power transistor 400-500 mhz, 300s pulse, 10% duty cycle for uhf band, weather and long range radar applications the innovative semiconductor company! hvvi semiconductors, inc. 10235 s. 51st st. suite 100 phoenix, az. 85044 iso 9001:2000 certifed tel: (866) 429-hvvi (4884) or visit www.hvvi.com ? 2008 hvvi semiconductors, inc. all rights reserved. eg-01-ds10a 12/11/08 5 p a ck age dimensions hvvi semiconductors, inc . iso 9001:2000 certified eg - 01- d s 10 a 10235 s. 51 st st. suite 100 tel: (866) 429 - hvvi (4884) or visit www.hvvi.com 12 / 12 /08 phoenix, az. 85044 ? 2008 hvvi semiconductors, inc. all rights reserved. 5 h vv 0405 - 175 high voltage, high ruggedness uhf pulsed power transistor 400 - 500 m hz, 30 0s pulse, 10 % duty cycle for uhf band, weather and long range radar applications % duty the i n novative semiconductor company! package dimensions hvvi semiconductors, inc. (hvvi) reserves the right to make changes to information published in this document at any time and without notice. this document supersedes and replaces all information supplied prior to the publication hereof. information in this document is believed to be accurate and reliable. however, hvvi does not give any representations or warra nties, either express or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. use of hvvi products as critical components in life support systems is not authorized. n o licenses, either express or implied, are conveyed under any hvvi intellectual property rights, including any patent rights. the hvvi name and logo are trademarks of hvvi semiconductors, inc. note: drawing is not actual size. source drain gate note: drawing is not actual size. hvvi semiconductors, inc. (hvvi) reserves the right to make changes to information published in this document at any time and without notice. this document supersedes and replaces all information supplied prior to the publication hereof. information in this document is believed to be accurate and reliable. however, hvvi does not give any representations or warranties, either express or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. use of hvvi products as critical components in life support systems is not authorized. no licenses, either express or implied, are conveyed under any hvvi intellectual property rights, including any patent rights. the hvvi name and logo are trademarks of hvvi semiconductors, inc.
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